Massachusetts, Florida Inventors Develop Low-Energy High-Current Ion Implantation Apparatus
Copyright © Targeted News Service 2008
2008-10-27
ALEXANDRIA, Va., Oct. 27 -- Kenneth H. Purser of Lexington, Mass., and Norman L. Turner of Vero Beach, Fla., have developed a apparatus for low-energy high-current ion implantation.
According to the abstract released by the U.S. Patent & Trademark Office: "The fabrication of modern semiconducting integrated circuits often requires implantation steps that involve high currents of low-energy charged dopant atoms. When employing such beams, the addition of electrons or negative ions . . .
According to the abstract released by the U.S. Patent & Trademark Office: "The fabrication of modern semiconducting integrated circuits often requires implantation steps that involve high currents of low-energy charged dopant atoms. When employing such beams, the addition of electrons or negative ions . . .