California Inventors Develop Integrated Circuit Memory Apparatus
Copyright © Targeted News Service 2008
2008-11-29
ALEXANDRIA, Va., Nov. 29 -- Manish Sharma of Sunnyvale, Calif., and Lung Tran of Saratoga, Calif., have developed an integrated circuit memory device.
According to the abstract released by the U.S. Patent & Trademark Office: "An exemplary memory array including a plurality of memory cells, each of the memory cells comprises a first ferromagnetic layer, a second ferromagnetic layer spaced apart from the first ferromagnetic layer by a non-magnetic insulating layer and being magnetic . . .
According to the abstract released by the U.S. Patent & Trademark Office: "An exemplary memory array including a plurality of memory cells, each of the memory cells comprises a first ferromagnetic layer, a second ferromagnetic layer spaced apart from the first ferromagnetic layer by a non-magnetic insulating layer and being magnetic . . .