California Inventors Develop Flash Memory Device
Copyright © Targeted News Service 2008
2008-11-29
ALEXANDRIA, Va., Nov. 29 -- Loc Tu and Jeffrey Lutze, both of San Jose, Calif., Jun Wan and Jian Chen, both of Sunnyvale, Calif., have developed a memory device.
According to the abstract released by the U.S. Patent & Trademark Office: "A flash memory device of the multi-level cell type, in which control gate voltages in read and programming operations and a bandgap reference voltage source are trimmable from external terminals, is disclosed. In a special test mode, control gate v . . .
According to the abstract released by the U.S. Patent & Trademark Office: "A flash memory device of the multi-level cell type, in which control gate voltages in read and programming operations and a bandgap reference voltage source are trimmable from external terminals, is disclosed. In a special test mode, control gate v . . .