French Inventors Develop Semiconductor Entity Producing Method
Copyright © Targeted News Service 2008
2008-10-25
ALEXANDRIA, Va., Oct. 25 -- Olivier Rayssac and Christophe Fernandez, both of Grenoble, France, and Yves Matthieu Le Vaillant of Crolles Cedex, France, have developed a semiconductor entity producing system.
According to the abstract released by the U.S. Patent & Trademark Office: "A method for producing a semiconductor entity is described. The method includes providing a donor substrate having a zone of weakness at a predetermined depth to define a thin layer, and the donor subs . . .
According to the abstract released by the U.S. Patent & Trademark Office: "A method for producing a semiconductor entity is described. The method includes providing a donor substrate having a zone of weakness at a predetermined depth to define a thin layer, and the donor subs . . .